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| Code | photo_camera | Remains | shopping_cart | 1 | 2 | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 048522 |  | Diode 2X8A 200V 35ns Common Anode | total: 127 pcs маг ДП: 127 pcs |
| JSMSEMI | Быстрый диод | 2 Diode | Общий анод | 16 А | 200 V | 35 нс | TO220 | |||
| 047767 | | Diode 2X8A 600V 50ns Common cathode | total: 147 pcs маг ДП: 147 pcs |
| JSMSEMI | Быстрый диод | 2 Diode | Общий катод | 16 А | 600 V | 50 нс | TO220 | |||
| 047754 |  | Diode 650V Single 16.7A 1.45V@6A TO-252-3 Schottky Barrier Diodes | total: 46 pcs маг ДП: 46 pcs |
| InventChip | Диод Шоттки | Diode | Одиночный | 16.7 А | 650 V | TO252-2L | ||||
| 047679 |  | Schottky diode 20A 45V single schottky diode | total: 59 pcs маг ДП: 59 pcs |
| CJ | Диод Шоттки | Diode | Одиночный | 20 А | 45 V | TO277 | ||||
| 047905 |  | Schottky diode 20A 45V | total: 4720 pcs маг ДП: 220 pcs |
| Диод Шоттки | Diode | Одиночный | 20 А | 45 V | R6, axial | |||||
| 047533 | | Schottky diode Single diode 20A 60V | total: 72 pcs маг ДП: 72 pcs |
| DIODES | Диод Шоттки | Diode | Одиночный | 20 А | 60 V | POWERDI5 | ||||
| 045499 | | Schottky diode 20A 80V single Schottky diode | total: 257 pcs маг ДП: 257 pcs |
| GOODWORK | Диод Шоттки | Diode | Одиночный | 20 А | 80 V | TO277 | ||||
| 026744 |  | Schottky diode 2x10A 100V common cathode | total: 618 pcs маг ДП: 618 pcs |
| LITE-ON | Диод Шоттки | 2 Diode | Общий катод | 20 А | 100 V | TO220 | ||||
| 039216 | | Schottky diode 2x10A 100V common cathode | total: 4349 pcs маг ДП: 349 pcs |
| NAMC | Диод Шоттки | 2 Diode | Общий катод | 20 А | 100 V | TO220 | ||||
| 040192 |  | Schottky diode 2X10A 100V TO220F | total: 9764 pcs маг ДП: 9764 pcs |
| NAMC | Диод Шоттки | 2 Diode | Общий катод | 20 А | 100 V | TO220F | ||||
| 041619 |  | Schottky diode 2x10A 100V common cathode | total: 450 pcs маг ДП: 450 pcs |
| LX | Диод Шоттки | 2 Diode | Общий катод | 20 А | 100 V | D2PAK | ||||
| 041630 | | Schottky diode 2x10A 100V common cathode | total: 233 pcs маг ДП: 233 pcs |
| MCC | Диод Шоттки | 2 Diode | Общий катод | 20 А | 100 V | D2PAK | ||||
| 045069 | | Schottky diode 2x10A 100V common cathode | total: 2132 pcs маг ДП: 2132 pcs |
| LX | Диод Шоттки | 2 Diode | Общий катод | 20 А | 100 V | TO252-2L | ||||
| 052056 | | Schottky diode 2X10A 100V TO220F | total: 1000 pcs маг ДП: 1000 pcs |
| LITE-ON | Диод Шоттки | 2 Diode | Общий катод | 20 А | 100 V | TO220F | ||||
| 026482 | | Schottky diode 2X10A 150V | total: 186 pcs маг ДП: 186 pcs |
| IR | Диод Шоттки | 2 Diode | Общий катод | 20 А | 150 V | TO220 | ||||
| 023212 | | Diode 2X10A 300V 25ns | total: 66 pcs маг ДП: 66 pcs |
| STM | Быстрый диод | 2 Diode | Общий катод | 20 А | 200 V | 25 нс | D2PAK | |||
| 026745 | | Schottky diode 2x10A 200V common cathode | total: 99 pcs маг ДП: 99 pcs |
| LITE-ON | Диод Шоттки | 2 Diode | Общий катод | 20 А | 200 V | TO220 | ||||
| 035551 | | Schottky diode 2x10A 200V common cathode | total: 639 pcs маг ДП: 639 pcs |
| CJ | Диод Шоттки | 2 Diode | Общий катод | 20 А | 200 V | D2PAK | ||||
| 039217 |  | Schottky diode | total: 1686 pcs маг ДП: 1686 pcs |
| NAMC | Диод Шоттки | 2 Diode | Общий катод | 20 А | 200 V | TO220F | ||||
| 044052 | | Schottky diode 2x10A 200V common cathode | total: 2370 pcs маг ДП: 2370 pcs |
| NAMC | Диод Шоттки | 2 Diode | Общий катод | 20 А | 200 V | TO220 | ||||
| 045506 |  | Schottky diode 2x10A 200V common cathode | total: 266 pcs маг ДП: 266 pcs |
| MDD | Диод Шоттки | Diode | Общий катод | 20 А | 200 V | TO220 | ||||
| 045525 | | Schottky diode 2x10A 200V common cathode | total: 455 pcs маг ДП: 455 pcs |
| PANJIT | Диод Шоттки | 2 Diode | Общий катод | 20 А | 200 V | TO220 | ||||
| 048503 | | Schottky diode 2x10A 200V common cathode | total: 452 pcs маг ДП: 452 pcs |
| CJ | Диод Шоттки | 2 Diode | Общий катод | 20 А | 200 V | TO252-2L | ||||
| 051040 | | Schottky diode 2x10A 200V Common cathode | total: 986 pcs маг ДП: 986 pcs |
| PANJIT | Диод Шоттки | 2 Diode | Общий катод | 20 А | 200 V | TO220F | ||||
| 051522 | | Schottky diode 2x10A 200V Common cathode | total: 1000 pcs маг ДП: 1000 pcs |
| SMC-diodes | Диод Шоттки | 2 Diode | Общий катод | 20 А | 200 V | TO220F | ||||
| 046394 | | Diode 300V 2*10A 31ns common cathode | total: 73 pcs маг ДП: 73 pcs |
| SMC-diodes | Быстрый диод | 2 Diode | Общий катод | 20 А | 300 V | 31 нс | TO220 | |||
| 037645 | | Diode 20A 1000V | total: 10875 pcs маг ДП: 275 pcs |
| Выпрямительный диод | Diode | Одиночный | 20 А | 1 kV | R6, axial | |||||
| 039200 |  | Diode Silicon Carbide Schottky Diode 600V 8A | total: 97 pcs маг ДП: 97 pcs |
| CREE | Диод Шоттки | Diode | Одиночный | 24 А | 600 V | TO220-2 | ||||
| 051161 | | Schottky diode 25A 50V | total: 972 pcs маг ДП: 972 pcs |
| Диод Шоттки | Diode | Одиночный | 25 А | 50 V | R6, axial | |||||
| 014121 |  | Schottky diode 2 diodes, common cathode, total current 25A 100V | total: 757 pcs маг ДП: 757 pcs |
| TSC | Диод Шоттки | 2 Diode | Общий катод | 25 А | 100 V | TO220 | ||||
| 025089 |  | Diode VS- 25A 600V 23ns | total: 61 pcs маг ДП: 61 pcs |
| VISHAY | Быстрый диод | Diode | Одиночный | 25 А | 600 V | 23 нс | TO247 | |||
| 039339 | | Diode VS- 25A 600V 23ns | total: 91 pcs маг ДП: 91 pcs |
| VISHAY | Быстрый диод | Diode | Одиночный | 25 А | 600 V | 23 нс | TO220-2 | |||
| 042162 |  | Diode VS- 25A 600V 23ns | total: 11 pcs маг ДП: 11 pcs |
| VISHAY | Быстрый диод | Diode | Одиночный | 25 А | 600 V | 23 нс | TO220-2 | |||
| 030583 | | Schottky diode 2x15A 35V | total: 90 pcs маг ДП: 90 pcs |
| IR | Диод Шоттки | 2 Diode | Общий катод | 30 А | 35 V | TO220 | ||||
| 039352 |  | Schottky diode | total: 198 pcs маг ДП: 198 pcs |
| DIODES | Диод Шоттки | 2 Diode | Общий катод | 30 А | 45 V | TO220 | ||||
| 046407 | | Schottky diode 45V 2*15A common cathode | total: 967 pcs маг ДП: 967 pcs |
| MDD | Диод Шоттки | 2 Diode | Общий катод | 30 А | 45 V | TO220 | ||||
| 047520 | | Schottky diode 45V 2*15A common cathode | total: 189 pcs маг ДП: 189 pcs |
| PANJIT | Диод Шоттки | 2 Diode | Общий катод | 30 А | 45 V | TO220F | ||||
| 047727 | | Schottky diode 45V 30A single diode | total: 35 pcs маг ДП: 35 pcs |
| VISHAY | Диод Шоттки | Diode | Одиночный | 30 А | 45 V | TO263AB | ||||
| 027607 | | Schottky diode 2x15A 100V common cathode | total: 437 pcs маг ДП: 437 pcs |
| PANJIT | Диод Шоттки | 2 Diode | Общий катод | 30 А | 100 V | TO220 | ||||
| 029846 |  | Schottky diode 2x15A 100V common cathode | total: 410 pcs маг ДП: 410 pcs |
| PANJIT | Диод Шоттки | 2 Diode | Общий катод | 30 А | 100 V | TO247AD | ||||
| 041782 | | Schottky diode 2x15A 100V common cathode | total: 1376 pcs маг ДП: 376 pcs |
| NAMC | Диод Шоттки | 2 Diode | Общий катод | 30 А | 100 V | TO220 | ||||
| 044652 |  | Schottky diode VS- 2X15A 150V | total: 24 pcs маг ДП: 24 pcs |
| VISHAY | Диод Шоттки | 2 Diode | Общий катод | 30 А | 150 V | TO247 | ||||
| 030613 | | Schottky diode 2x15A 200V common cathode | total: 188 pcs маг ДП: 188 pcs |
| PANJIT | Диод Шоттки | 2 Diode | Общий катод | 30 А | 200 V | TO247AD | ||||
| 031590 | | Diode 2x15A 200V 20ns common cathode | total: 40 pcs маг ДП: 40 pcs |
| STM | Быстрый диод | 2 Diode | Общий катод | 30 А | 200 V | 20 нс | TO247 | |||
| 041009 |  | Schottky diode 2x15A 200V common cathode | total: 93 pcs маг ДП: 93 pcs |
| NAMC | Диод Шоттки | 2 Diode | Общий катод | 30 А | 200 V | TO247 | ||||
| 029326 | | Diode Two diodes with a common cathode 300V 2x15A 35ns | total: 56 pcs маг ДП: 56 pcs |
| IXYS | Быстрый диод | 2 Diode | Общий катод | 30 А | 300 V | 35 нс | D2PAK | |||
| 047764 | | Diode Two diodes with a common cathode 300V 2x15A 35ns | total: 28 pcs маг ДП: 28 pcs |
| IXYS | Быстрый диод | 2 Diode | Общий катод | 30 А | 300 V | 35 нс | TO247 | |||
| 047783 | | Diode 2X15A 300V 40ns | total: 103 pcs маг ДП: 103 pcs |
| STM | Быстрый диод | 2 Diode | Общий катод | 30 А | 300 V | 40 нс | TO247 | |||
| 025433 | | Diode 2x15A 600V 19ns | total: 64 pcs маг ДП: 64 pcs |
| IR | Быстрый диод | 2 Diode | Общий катод | 30 А | 600 V | 19 нс | TO220 | |||
| 026531 | | Diode 30A 600V 45ns | total: 113 pcs маг ДП: 113 pcs |
| ONS | Быстрый диод | Diode | Одиночный | 30 А | 600 V | 45 нс | TO220-2 |
Rectifier diodes- diodes designed to convert alternating current into direct current.
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
