| Code | photo_camera | Remains | shopping_cart | 1 | 2 | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 049692 | ![]() | Diode 5mA 16kV 0.08ms | 297 pcs |
| Diode | Single | Fast diode | 5 mA | 16 kV | DO312 | ||||
| 052640 | ![]() | Diode 0.15A 80V 4ns | 173950 pcs |
| Diode | Single | Fast diode | 0.15 А | 80 V | SOD123 | FOSAN | |||
| 052641 | ![]() | Diode 0.15A 80V 4ns 200mW | 179750 pcs |
| Diode | Single | Fast diode | 0.15 А | 80 V | SOD323 | FOSAN | |||
| 032970 | ![]() | Diode | 17380 pcs |
| Diode | Single | Fast diode | 0.15 А | 100 V | SOD523 | ||||
| 052634 | ![]() | Diode 0.15A 100V 4ns 200mW | 342250 pcs |
| Diode | Single | Fast diode | 0.15 А | 100 V | SOD123-FL | FOSAN | |||
| 052635 | ![]() | Diode 0.15A 100V 4ns 200mW | 170840 pcs |
| Diode | Single | Fast diode | 0.15 А | 100 V | SOD323 | FOSAN | |||
| 026721 | ![]() | Schottky diode 0.2A 30V SOT23 Single | 3100 pcs |
| Diode | Single | Schottky diode | 0.2 А | 30 V | SOT23 | ||||
| 050634 | ![]() | Schottky diode 2X0.2A 30V common cathode | 60950 pcs |
| 2 Diode | Common cathode | Schottky diode | 0.2 А | 30 V | SOT23 | FOSAN | |||
| 052642 | ![]() | Schottky diode 2X0.2A 30V common anode | 58800 pcs |
| 2 Diode | Common anode | Schottky diode | 0.2 А | 30 V | SOT23 | FOSAN | |||
| 003417 | ![]() | Diode LL VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns | 3000 pcs |
| Diode | Single | Fast diode | 0.2 А | 75 V | LL-34 | SEMTECH | |||
| 050638 | ![]() | Diode Two diodes in series Vr=80B, If=0.2A | 41610 pcs |
| 2 Diode | Half bridge | Fast diode | 0.2 А | 80 V | SOT23 | FOSAN | |||
| 026725 | ![]() | Diode 0.2A 100V 15ns serial connection | 630 pcs |
| 2 Diode | Half bridge | Fast diode | 0.2 А | 100 V | SOT23 | TASUND | |||
| 027650 | ![]() | Diode 0.2A 100V | 80897 pcs |
| Diode | Single | Fast diode | 0.2 А | 100 V | DO35 | SEMTECH | |||
| 052643 | ![]() | Diode Two diodes with a common cathode. Vr = 100 V, If = 200 mA, trr = 6 ns | 55160 pcs |
| 2 Diode | Common cathode | Fast diode | 0.2 А | 100 V | SOT23 | FOSAN | |||
| 024726 | ![]() | Diode 0.2A 200V Sod123 | 4050 pcs |
| Diode | Single | Fast diode | 0.2 А | 200 V | SOD123 | CJ | |||
| 005836 | ![]() | Diode 0.2A 250V 50ns | 6928 pcs |
| Diode | Single | Fast diode | 0.2 А | 250 V | DO35 | ||||
| 031507 | ![]() | Diode Diode assembly two half-bridge 300V 225MA 50ns | 191 pcs |
| 4 Diode | 2 half bridges | Fast diode | 0.225 А | 300 V | SOT23-6 | DIODES | |||
| 005954 | ![]() | Diode 0.2A 200V 50ns | 17860 pcs | 1,38UAH
| Diode | Single | Fast diode | 0.25 А | 200 V | SOD80C | SEMTECH | |||
| 029211 | ![]() | Diode 225mA 250V 50ns serial connection | 6413 pcs |
| 2 Diode | Half bridge | Fast diode | 0.4 А | 200 V | SOT23 | CJ | |||
| 005403 | ![]() | Diode bridge Diode Bridge 0.5A 600V | 5480 pcs |
| 4 Diode | Bridge | Rectifier diode | 0.5 А | 600 V | |||||
| 028473 | ![]() | Diode bridge Diode Bridge 0.5A 600V | 4760 pcs |
| 4 Diode | Bridge | Rectifier diode | 0.5 А | 600 V | |||||
| 029188 | ![]() | Diode bridge Diode Bridge, 0.5A 600V | 54985 pcs |
| 4 Diode | Bridge | Rectifier diode | 0.5 А | 600 V | |||||
| 029189 | ![]() | Diode bridge Diode Bridge 0.5A 1000V | 38825 pcs |
| 4 Diode | Bridge | Rectifier diode | 0.5 А | 1 kV | |||||
| 012858 | ![]() | Diode bridge 0.8A 1000V | 11524 pcs |
| 4 Diode | Bridge | Rectifier diode | 0.8 А | 1 kV | |||||
| 013930 | ![]() | Diode bridge MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER - 0.8A 1000V | 1000 pcs |
| 4 Diode | Bridge | Rectifier diode | 0.8 А | 1 kV | |||||
| 007194 | ![]() | Schottky diode 30V 1A/25Ap | 32729 pcs |
| Diode | Single | Schottky diode | 1 А | 30 V | DO41 | ||||
| 004808 | ![]() | Schottky diode 40V 1A/25Ap | 32924 pcs |
| Diode | Single | Schottky diode | 1 А | 40 V | DO41 | ||||
| 036057 | ![]() | Schottky diode Schottky diode 1A, 40V. | 820 pcs |
| Diode | Single | Schottky diode | 1 А | 40 V | SOD523 | ||||
| 052636 | ![]() | Schottky diode Schottky diode 1A, 40V. | 165999 pcs |
| Diode | Single | Schottky diode | 1 А | 40 V | SOD123 | FOSAN | |||
| 052638 | ![]() | Schottky diode Schottky diode 1A, 40V. | 54700 pcs |
| Diode | Single | Schottky diode | 1 А | 40 V | SOD523 | FOSAN | |||
| 052644 | ![]() | Schottky diode DSK14W K14 Diode 1A, 40V. | 57300 pcs |
| Diode | Single | Schottky diode | 1 А | 40 V | SOD123-FL | FOSAN | |||
| 052650 | ![]() | Schottky diode SS14F Schottky diode 1A 40V | 48900 pcs |
| Diode | Single | Schottky diode | 1 А | 40 V | SMAF | FOSAN | |||
| 029199 | ![]() | Diode | 17081 pcs |
| Diode | Single | Rectifier diode | 1 А | 50 V | DO41 | MIC | |||
| 029196 | ![]() | Schottky diode 1A 60V | 5780 pcs |
| Diode | Single | Schottky diode | 1 А | 60 V | DO41 | MIC | |||
| 016328 | ![]() | Schottky diode Schottky diode 1A, 80B | 4590 pcs |
| Diode | Single | Schottky diode | 1 А | 80 V | SMA | ||||
| 029198 | ![]() | Schottky diode 1A 100V | 3480 pcs |
| Diode | Single | Schottky diode | 1 А | 100 V | DO41 | MIC | |||
| 052647 | ![]() | Schottky diode SS110 1A 100V | 114950 pcs |
| Diode | Single | Schottky diode | 1 А | 100 V | SMA | FOSAN | |||
| 052648 | ![]() | Schottky diode SS110F 1A 100V | 55450 pcs |
| Diode | Single | Schottky diode | 1 А | 100 V | SMAF | FOSAN | |||
| 007175 | ![]() | Diode 1A 400V 35ns | 29627 pcs |
| Diode | Single | Fast diode | 1 А | 400 V | DO41 | ||||
| 029200 | ![]() | Diode | 25810 pcs |
| Diode | Single | Rectifier diode | 1 А | 400 V | DO41 | MIC | |||
| 005635 | ![]() | Diode 1A 600V 35ns | 11040 pcs |
| Diode | Single | Fast diode | 1 А | 600 V | DO41 | ||||
| 006780 | ![]() | Diode 1A 600V 150ns | 16480 pcs |
| Diode | Single | Fast diode | 1 А | 600 V | DO41 | ||||
| 007173 | ![]() | Diode 1A 600V 50ns | 33 pcs |
| Diode | Single | Fast diode | 1 А | 600 V | SMB | ONS | |||
| 005903 | ![]() | Diode 1A 1000V 75ns | 14110 pcs |
| Diode | Single | Fast diode | 1 А | 1 kV | DO41 | ||||
| 006200 | ![]() | Diode 1A 1000V | 6160 pcs |
| Diode | Single | Rectifier diode | 1 А | 1 kV | R-1 | ||||
| 006856 | ![]() | Diode bridge 1-phase bridge, 1A, 1000V, case: DIP4 (pitch: 5.08 mm) | 7598 pcs |
| 4 Diode | Bridge | Rectifier diode | 1 А | 1 kV | DIP4 | SEP | |||
| 011731 | ![]() | Diode 1A 1000V | 20 pcs |
| Diode | Single | Fast diode | 1 А | 1 kV | DO41 | MIC | |||
| 015680 | ![]() | Diode bridge 1-phase bridge, 1A, 1000V | 9040 pcs |
| 4 Diode | Bridge | Rectifier diode | 1 А | 1 kV | |||||
| 028275 | ![]() | Diode | 54620 pcs |
| Diode | Single | Rectifier diode | 1 А | 1 kV | SOD123-FL | ||||
| 029185 | ![]() | Diode | 63944 pcs | 0,92UAH
| Diode | Single | Fast diode | 1 А | 1 kV | DO41 |
A semiconductor diode consists of either p-type and n-type semiconductors (semiconductors with different types of impurity conductivity), or semiconductor and metal (Schottky diode). The contact between semiconductors is called a pn junction and conducts current in one direction (has one-way conductivity).
Special types of diodes:
- Zener diodes (Zener diodes) are diodes operating in the mode of (reversible) breakdown of the pn junction (see the reverse branch of the current-voltage characteristic). Used for voltage stabilization.
- Tunnel diodes (Leo Esaki diodes) are diodes that use quantum mechanical effects. On the current-voltage characteristic, they have a region of the so-called "negative resistance". They are used as amplifiers, generators, etc.
- Inverted diodes are diodes that have a much lower on-state voltage drop than conventional diodes. The principle of operation of such diodes is based on the tunneling effect.
- Point diodes are diodes characterized by a low p-n-junction capacitance and the presence on the reverse branch of the current-voltage characteristic of a section with a negative differential resistance. Previously, they were used in microwave technology (due to the low capacity of the p-n-junction) and were used in generators and amplifiers (due to the presence on the reverse branch of the current-voltage characteristic of a section with negative differential resistance).
- Varicaps (John Geumm diodes) are diodes with a large capacity when the pn junction is locked, depending on the applied reverse voltage. They are used as variable capacitors.
- LEDs (Henry Round diodes) are diodes that differ from ordinary diodes in that they emit light in the visible range (and not in the infrared) when electrons and holes recombine in the pn junction. LEDs are also produced with radiation in the infrared range, and more recently - in the ultraviolet.
- Semiconductor lasers are diodes that are similar in design to LEDs, but have an optical resonator. Emit coherent light.
- Photodiodes are diodes that are exposed to light.
- A solar cell is a diode similar to a photodiode but operates without bias. Light falling on the pn junction causes the movement of electrons and the generation of current.
- Gunn diodes are diodes used for generating and converting frequencies in the microwave range.
- The Schottky diode is a low voltage drop diode with direct power on.
- An avalanche diode is a diode whose principle of operation is based on an avalanche breakdown (see the reverse section of the current-voltage characteristic). It is used to protect circuits from overvoltage.
- Avalanche-transit diode is a diode, the principle of operation of which is based on avalanche multiplication of charge carriers. It is used to generate oscillations in microwave technology.
- Magnetodiode is a diode, the current-voltage characteristic of which significantly depends on the value of the magnetic field induction and the location of its vector relative to the plane of the p-n-junction.
- Stabilizers are diodes, during the operation of which a section of the branch of the current-voltage characteristic is used, corresponding to the "forward voltage" on the diode.
- A mixing diode is a diode designed to multiply two high-frequency signals.
- pin diode - a diode with a lower capacitance due to the presence between heavily doped p- and n-type semiconductors of a material characterized by its own conductivity. Used in microwave technology, power electronics, as a photodetector.
* the full version of the article can be found atlink








































