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| Код | photo_camera | Remains | shopping_cart | 1 | 2 | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 036645 |  | Diode 600V 6A Schottky silicon carbide diode | всего: 51 pcs маг ДП: 51 pcs |
| STM | Диод Шоттки | Diode | Одиночный | 6 А | 600 V | TO220-2 | ||||
| 039200 | | Diode Silicon Carbide Schottky Diode 600V 8A | всего: 41 pcs маг ДП: 41 pcs |
| CREE | Диод Шоттки | Diode | Одиночный | 24 А | 600 V | TO220-2 |
Rectifier diodes- diodes designed to convert alternating current into direct current.
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
