Код | photo_camera | Remains | shopping_cart | 1 | 2 | |||||||||
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021833 | Diode 60A 1200V 50ns | всего: 60 pcs маг ДП: 60 pcs |
| Diode | Одиночный | Быстрый диод | 60 А | 1.2 kV | DO247 | STM | ||||
023555 | Three-phase diode bridge Three Phase Rectifier Module 60A 1600V | всего: 135 pcs маг ДП: 35 pcs |
| 6 Diode | Мост | Выпрямительный диод | 60 А | 1.6 kV | M04 | GUERTE | ||||
033796 | Diode bridge Diode bridge single phase 60A 1600V | всего: 126 pcs маг ДП: 26 pcs |
| 4 Diode | Мост | Выпрямительный диод | 60 А | 1.6 kV | M04 | GUERTE | ||||
026630 | Diode 75A 1200V 100ns | всего: 65 pcs маг ДП: 65 pcs |
| Diode | Одиночный | Быстрый диод | 75 А | 1.2 kV | TO247-2L | ONS | ||||
038607 | Schottky diode VS- 2X40A 150V | всего: 74 pcs маг ДП: 74 pcs |
| 2 Diode | Общий катод | Диод Шоттки | 80 А | 150 V | TO247 | VISHAY | ||||
046395 | Schottky diode 150V 2*40A common cathode | всего: 45 pcs маг ДП: 45 pcs |
| 2 Diode | Общий катод | Диод Шоттки | 80 А | 150 V | TO247AD | SMC-diodes | ||||
038613 | Diode VS- 2x40A 300V 34ns common cathode | всего: 61 pcs маг ДП: 61 pcs |
| 2 Diode | Общий катод | Быстрый диод | 80 А | 300 V | TO247 | VISHAY | ||||
039204 | Diode VS- | всего: 39 pcs маг ДП: 39 pcs |
| Diode | Одиночный | Быстрый диод | 80 А | 400 V | POWIRTAB | VISHAY | ||||
045172 | Diode | всего: 48 pcs маг ДП: 48 pcs |
| Diode | Одиночный | Быстрый диод | 80 А | 600 V | TO247-2L | ONS | ||||
045174 | Diode Silicon Carbide Schottky Diode 1200V, 30A, 135nC | всего: 25 pcs маг ДП: 25 pcs |
| Diode | Одиночный | Диод Шоттки | 83 А | 1.2 kV | TO247-2L | CRMICRO | ||||
048107 | Diode bridge Diode bridge single-phase 100A 1600V | всего: 34 pcs маг ДП: 4 pcs |
| 4 Diode | Мост | Выпрямительный диод | 100 А | 1.6 kV | M15 | GUERTE | ||||
048108 | Three-phase diode bridge Three-phase rectifier module 100A 1600V | всего: 34 pcs маг ДП: 4 pcs |
| 6 Diode | Мост | Выпрямительный диод | 100 А | 1.6 kV | M15 | GUERTE | ||||
039224 | Schottky diode 150V 2x60A common cathode | всего: 41 pcs маг ДП: 41 pcs |
| 2 Diode | Общий катод | Диод Шоттки | 120 А | 150 V | TO247 | SMC-diodes | ||||
007143 | Diode VS- 150A 200V 45ns | всего: 32 pcs маг ДП: 32 pcs |
| Diode | Одиночный | Быстрый диод | 150 А | 200 V | POWIRTAB | VISHAY | ||||
006651 | Diode VS- 150A 400V 60ns | всего: 53 pcs маг ДП: 53 pcs |
| Diode | Одиночный | Быстрый диод | 150 А | 400 V | POWIRTAB | VISHAY | ||||
024122 | Diode module Diode module MDA - two diodes with a common anode | всего: 30 pcs маг ДП: 10 pcs |
| 2 Diode | Общий анод | Выпрямительный диод | 200 А | 1.6 kV | M03 | GUERTE | ||||
024125 | Diode module Diode Module MDC - Half Bridge 1600V 200A | всего: 50 pcs |
| 2 Diode | Полумост | Выпрямительный диод | 200 А | 1.6 kV | M03 | GUERTE | ||||
033794 | Diode module Diode module MDK - two diodes with a common cathode | всего: 32 pcs маг ДП: 2 pcs |
| 2 Diode | Общий катод | Выпрямительный диод | 200 А | 1.6 kV | M03 | GUERTE | ||||
033795 | Diode module Diode module MD - single diode | всего: 60 pcs маг ДП: 10 pcs |
| Diode | Одиночный | Выпрямительный диод | 200 А | 1.6 kV | M03 | GUERTE | ||||
048598 | Diode module 2X150A 600V 50ns Two diodes with a common cathode. | всего: 10 pcs маг ДП: 10 pcs |
| 2 Diode | Общий катод | Быстрый диод | 300 А | 600 V | FF1 | JILIN SINO | ||||
024123 | Diode module 2X200A 400V 150ns Two diodes with common cathode. | всего: 13 pcs маг ДП: 13 pcs |
| 2 Diode | Общий катод | Быстрый диод | 400 А | 400 V | M45 | GUERTE | ||||
000110 | Suppressor P Protective diode 600W 6.8V unidirectional | всего: 3984 pcs маг ДП: 3984 pcs |
| DO15 | ||||||||||
000111 | Suppressor P Protective diode 600W 6.8V bidirectional | всего: 4760 pcs маг ДП: 4760 pcs |
| DO15 | ||||||||||
000145 | Suppressor Protective diode 1.5kW 100V unidirectional | всего: 711 pcs маг ДП: 711 pcs |
| DO201 | ||||||||||
000147 | Suppressor Protective diode 1.5kW 10V unidirectional | всего: 1925 pcs маг ДП: 1925 pcs |
| DO201 | ||||||||||
000150 | Suppressor Protective diode 1.5kW 12V unidirectional | всего: 1730 pcs маг ДП: 1730 pcs |
| DO201 | ||||||||||
001299 | Suppressor Protective diode 1.5kW 12V bidirectional | всего: 1740 pcs маг ДП: 1740 pcs |
| DO201 | ||||||||||
001301 | Suppressor Protective diode 1,5kW 150V bidirectional | всего: 1855 pcs маг ДП: 1855 pcs |
| DO201 | ||||||||||
001302 | Suppressor Protective diode 1.5kW 15V unidirectional | всего: 520 pcs маг ДП: 520 pcs |
| DO201 | ||||||||||
001303 | Suppressor Protective diode 1.5kW 15V bidirectional | всего: 1470 pcs маг ДП: 1470 pcs |
| DO201 | ||||||||||
001304 | Suppressor Protective diode 1,5kW 160V bidirectional | всего: 1949 pcs маг ДП: 1949 pcs |
| DO201 | ||||||||||
001305 | Suppressor Protective diode 1,5kW 16V unidirectional | всего: 975 pcs маг ДП: 975 pcs |
| DO201 | ||||||||||
001306 | Suppressor Protective diode 1.5kW 180V unidirectional | всего: 747 pcs маг ДП: 747 pcs |
| DO201 | ||||||||||
001307 | Suppressor Protective diode 1.5kW 18V unidirectional | всего: 33 pcs маг ДП: 33 pcs |
| DO201 | ||||||||||
001308 | Suppressor Protective diode 1.5kW 18V bidirectional | всего: 2040 pcs маг ДП: 2040 pcs |
| DO201 | ||||||||||
001311 | Suppressor Protective diode 1.5kW 22V bidirectional | всего: 175 pcs маг ДП: 175 pcs |
| DO201 | ||||||||||
001312 | Suppressor Protective diode 1.5kW 24V unidirectional | всего: 3117 pcs маг ДП: 3117 pcs |
| DO201 | ||||||||||
001313 | Suppressor Protective diode 1.5kW 24V bidirectional | всего: 2840 pcs маг ДП: 2840 pcs |
| DO201 | ||||||||||
001319 | Suppressor Protective diode 1.5kW 30V unidirectional | всего: 1463 pcs маг ДП: 1463 pcs |
| DO201 | ||||||||||
001320 | Suppressor Protective diode 1.5kW 33V unidirectional | всего: 747 pcs маг ДП: 747 pcs |
| DO201 | ||||||||||
001321 | Suppressor Protective diode 1.5kW 33V bidirectional | всего: 652 pcs маг ДП: 652 pcs |
| DO201 | ||||||||||
001324 | Suppressor Protective diode 1.5kW 36V unidirectional | всего: 679 pcs маг ДП: 679 pcs |
| DO201 | ||||||||||
001326 | Suppressor Protective diode 1,5kW 400V unidirectional | всего: 1238 pcs маг ДП: 1238 pcs |
| DO201 | ||||||||||
001327 | Suppressor Protective diode 1,5kW 400V bidirectional | всего: 1228 pcs маг ДП: 1228 pcs |
| DO201 | ||||||||||
001329 | Suppressor Protective diode 1.5kW 440V bidirectional | всего: 3017 pcs маг ДП: 3017 pcs |
| DO201 | ||||||||||
001331 | Suppressor Protective diode 1.5kW 47V bidirectional | всего: 65 pcs маг ДП: 65 pcs |
| DO201 | ||||||||||
001332 | Suppressor Protective diode 1,5kW 56V unidirectional | всего: 253 pcs маг ДП: 253 pcs |
| DO201 | ||||||||||
001333 | Suppressor Protective diode 1.5kW 56V bidirectional | всего: 3643 pcs маг ДП: 3643 pcs |
| DO201 | ||||||||||
001334 | Suppressor Protective diode 1.5kW 6.8V unidirectional | всего: 313 pcs маг ДП: 313 pcs |
| DO201 | ||||||||||
001335 | Suppressor Protective diode 1.5kW 6.8V bidirectional | всего: 851 pcs маг ДП: 851 pcs |
| DO201 |
A semiconductor diode consists of either p-type and n-type semiconductors (semiconductors with different types of impurity conductivity), or semiconductor and metal (Schottky diode). The contact between semiconductors is called a pn junction and conducts current in one direction (has one-way conductivity).
Special types of diodes:
- Zener diodes (Zener diodes) are diodes operating in the mode of (reversible) breakdown of the pn junction (see the reverse branch of the current-voltage characteristic). Used for voltage stabilization.
- Tunnel diodes (Leo Esaki diodes) are diodes that use quantum mechanical effects. On the current-voltage characteristic, they have a region of the so-called "negative resistance". They are used as amplifiers, generators, etc.
- Inverted diodes are diodes that have a much lower on-state voltage drop than conventional diodes. The principle of operation of such diodes is based on the tunneling effect.
- Point diodes are diodes characterized by a low p-n-junction capacitance and the presence on the reverse branch of the current-voltage characteristic of a section with a negative differential resistance. Previously, they were used in microwave technology (due to the low capacity of the p-n-junction) and were used in generators and amplifiers (due to the presence on the reverse branch of the current-voltage characteristic of a section with negative differential resistance).
- Varicaps (John Geumm diodes) are diodes with a large capacity when the pn junction is locked, depending on the applied reverse voltage. They are used as variable capacitors.
- LEDs (Henry Round diodes) are diodes that differ from ordinary diodes in that they emit light in the visible range (and not in the infrared) when electrons and holes recombine in the pn junction. LEDs are also produced with radiation in the infrared range, and more recently - in the ultraviolet.
- Semiconductor lasers are diodes that are similar in design to LEDs, but have an optical resonator. Emit coherent light.
- Photodiodes are diodes that are exposed to light.
- A solar cell is a diode similar to a photodiode but operates without bias. Light falling on the pn junction causes the movement of electrons and the generation of current.
- Gunn diodes are diodes used for generating and converting frequencies in the microwave range.
- The Schottky diode is a low voltage drop diode with direct power on.
- An avalanche diode is a diode whose principle of operation is based on an avalanche breakdown (see the reverse section of the current-voltage characteristic). It is used to protect circuits from overvoltage.
- Avalanche-transit diode is a diode, the principle of operation of which is based on avalanche multiplication of charge carriers. It is used to generate oscillations in microwave technology.
- Magnetodiode is a diode, the current-voltage characteristic of which significantly depends on the value of the magnetic field induction and the location of its vector relative to the plane of the p-n-junction.
- Stabilizers are diodes, during the operation of which a section of the branch of the current-voltage characteristic is used, corresponding to the "forward voltage" on the diode.
- A mixing diode is a diode designed to multiply two high-frequency signals.
- pin diode - a diode with a lower capacitance due to the presence between heavily doped p- and n-type semiconductors of a material characterized by its own conductivity. Used in microwave technology, power electronics, as a photodetector.
* the full version of the article can be found atlink