Sitall substrate ST-32-1 [60x48x1mm] polished

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Material: microwave sitall.
Application:
-for the manufacture of thick- and thin-film integrated circuits and microwave integrated circuits (operating in the microwave range).
- to isolate live parts that require cooling from radiators (preferably the use of heat-conducting pastes or adhesives)
Technical characteristics according to TU No. TX7.817.000-01

Dimensions: 60x48x1 mm
Processing: - double-sided polishing (grade 14)

Density, kg/m3: 2500
Dielectric constant (E) at a frequency of 10 GHz: 9.7-10
Dielectric loss tangent (tgo) at 10 GHz: 0.0005
ТКе in the interval 20-80С at a frequency of 10 GHz: +60
Ultimate strength in static bending, MPa: 100
Linear thermal expansion coefficient L, 10^-7FROM^-1: 32
Thermal conductivity coefficient at 100⁰С, W/m⁰C: 1.67


Sitalls- glass-ceramic materials obtained as a result of heat treatment (crystallization) of glass.
Most sitalls are characterized by the following oxide composition:
1) Li2O — Al2O3 —SiO2 —TiO2;
2) RO — A12O3 - SiO2 — TiO2 (RO is one of the oxides CaO, MgO, or BaO).

Sitalls are 2-3 times superior to glass in terms of mechanical strength. They are well pressed, stretched, rolled. The dielectric properties of sitalls are better than glasses, and they are practically not inferior to ceramics.
However, ceramics, especially beryllium ceramics, have a significantly higher thermal conductivity compared to glasses. In addition, it has greater mechanical strength and better chemical resistance. However, the large grain sizes of ceramic materials do not allow obtaining a satisfactory surface microrelief for thin-film integrated circuits.