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Whole catalog Active ingredientsTransistors, modulesField effect transistors
Код товару:
009961

Transistor IRFBC30PBF

N-ch Vds = 600V Id25 = 3.6A Rds = 2.2Ohm Field-effect transistor N-Channel
V dss = V ; R ds = Ohm ; I d 25°C = A ; I d 100°C = A; R°C/W = °C/W; P d = W
Transistor IRFBC30PBF
Корпус: TO220
Manufacturer: International Rectifier (IR)
NOT available.
Expected price: 30,95 UAH
from 1 pc : 30,95 UAH
from 50 pcs : 27,86 UAH ( -10,0%)
from 200 pcs : 24,76 UAH ( -20,0%)
Prices are indicated at the time of product availability and may change upon receipt

Current balances:

NOT available

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Product description format_size zoom_out zoom_in

Parameter Value
Channel: N-Канальный
Logic level:
Drain-source breakdown voltage, V dss : V
On-drain drain-source resistance, R ds : Ohm
Constant drain current, at temperature = 25°C, I d A
Permanent drain current, at temperature = 100°C, I d A
Maximum die-to-case thermal resistance, R°C/W: °C/W
Maximum power dissipation, P d : Tue
The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.

If you need additional information, or you found an error in the description, or have other questions about this product, then our manager will help you: Евгений ЗП sensrv.voron@gmail.com

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