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Whole catalog Active ingredientsTransistors, modulesField effect transistors
Код товара:
009967

IRFD210

Field-effect transistor N-Канальный
V dss = 200 V ; R ds = 1.5 Ohm ; I d 25°C = 0.6 A ; I d 100°C = 0.38 A; R°C/W = 120°C/W; P d = 1.3 W
IRFD210
Корпус: DIP4
Manufacturer: International Rectifier (IR)
NOT available.
Expected price: 24,19 UAH
from 1 pc : 24,19 UAH
from 50 pcs : 22,38 UAH ( -7,5%)
from 100 pcs : 20,56 UAH ( -15,0%)
Prices are indicated at the time of product availability and may change upon receipt

Current balances:

NOT available

Technical documentation

Изображение товара

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Parameter Value
Channel: N-Канальный
Logic level: НЕТ
Drain-source breakdown voltage, V dss : 200 V
On-drain drain-source resistance, R ds : 1.5 Ohm
Constant drain current, at temperature = 25°C, I d 0.6 A
Permanent drain current, at temperature = 100°C, I d 0.38 A
Maximum die-to-case thermal resistance, R°C/W: 120°C/W
Maximum power dissipation, P d : 1.3 Tue

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The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.

If you need additional information, or you found an error in the description, or have other questions about this product, then our manager will help you: Евгений ЗП unknown