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Whole catalog Active ingredientsTransistors, modulesField effect transistors
Код товара:
009997

IRFP450

Field-effect transistor N-Канальный
V dss = 500 V ; R ds = 0.4 Ohm ; I d 25°C = 14 A ; I d 100°C = 8.7 A; R°C/W = 0.65°C/W; P d = 190 W
IRFP450
Корпус: TO247
Manufacturer: International Rectifier (IR)
NOT available.
Expected price: 79,80 UAH
from 1 pc : 79,80 UAH
from 5 pcs : 75,81 UAH ( -5,0%)
from 25 pcs : 71,82 UAH ( -10,0%)
Prices are indicated at the time of product availability and may change upon receipt

Current balances:

NOT available

Technical documentation

Изображение товара

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Parameter Value
Channel: N-Канальный
Logic level: НЕТ
Drain-source breakdown voltage, V dss : 500 V
On-drain drain-source resistance, R ds : 0.4 Ohm
Constant drain current, at temperature = 25°C, I d 14 A
Permanent drain current, at temperature = 100°C, I d 8.7 A
Maximum die-to-case thermal resistance, R°C/W: 0.65°C/W
Maximum power dissipation, P d : 190 Tue

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The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.

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