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Field-effect transistor N-Канальный Логический уровень V dss = 30 V ; R ds = 0.25 Ohm ; I d 25°C = 1.2 A ; I d 100°C = 0.93 A; R°C/W = 230°C/W; P d = 0.54 W
Constant drain current, at temperature = 25°C, I d
1.2 A
Permanent drain current, at temperature = 100°C, I d
0.93 A
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Maximum die-to-case thermal resistance, R°C/W:
230°C/W
Maximum power dissipation, P d :
0.54 Tue
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