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Whole catalog Active ingredientsTransistors, modulesField effect transistors
Product code:
009901

Transistor IRF5305

Field-effect transistor P-Канальный
V dss = -55 V ; R ds = 0.06 Ohm ; I d 25°C = -31 A ; I d 100°C = -22 A; R°C/W = 1.4°C/W; P d = 110 W
Transistor IRF5305
Case: TO220
Manufacturer: International Rectifier (IR)
NOT available.
Expected price: 23,10 UAH
from 1 pc : 23,10 UAH
from 50 pcs : 22,05 UAH ( -4,5%)
from 200 pcs : 21,00 UAH ( -9,1%)
Prices are indicated at the time of product availability and may change upon receipt

Current balances:

NOT available

Technical documentation

Product picture

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Parameter Value
Channel: P-Канальный
Logic level: НЕТ
Drain-source breakdown voltage, V dss : -55 V
On-drain drain-source resistance, R ds : 0.06 Ohm
Constant drain current, at temperature = 25°C, I d -31 A
Permanent drain current, at temperature = 100°C, I d -22 A
Maximum die-to-case thermal resistance, R°C/W: 1.4°C/W
Maximum power dissipation, P d : 110 Tue

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The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.

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