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Код товара:
009992

Transistor IRFP260N

Field-effect transistor N-Канальный
V dss = 200 V ; R ds = 0.04 Ohm ; I d 25°C = 49 A ; I d 100°C = 0 A; R°C/W = 0.5°C/W; P d = 300 W
Transistor IRFP260N
Корпус: TO247
Manufacturer: International Rectifier (IR)

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Technical documentation

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Parameter Value
Channel: N-Канальный
Logic level: НЕТ
Drain-source breakdown voltage, V dss : 200 V
On-drain drain-source resistance, R ds : 0.04 Ohm
Constant drain current, at temperature = 25°C, I d 49 A
Permanent drain current, at temperature = 100°C, I d 0 A
Maximum die-to-case thermal resistance, R°C/W: 0.5°C/W
Maximum power dissipation, P d : 300 Tue

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